MOSFET, DUAL P CH, -20V, -2.1A, CHIPFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.1W; Transistor Case Style:ChipFET; No. of
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.1A
Rds On (Max) @ Id, Vgs 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead