Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 25 (Tc)
Rds On (Max) @ Id, Vgs 9.8 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 120nC @ 8V
Input Capacitance (Ciss) @ Vds 4300pF @ 10V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case -