Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 23 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA
Gate Charge (Qg) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)