MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:15
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) @ Vds 2070pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)