Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.3A, 7A
Rds On (Max) @ Id, Vgs 22 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1W, 1.25W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)