Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Rds On (Max) @ Id, Vgs 3.75 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 5540pF @ 15V
Power - Max 7.8W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)