Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.7A, 3A
Rds On (Max) @ Id, Vgs 53 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.13W, 1.2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)