Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 13.6A (Ta), 20.5A (Tc)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 77nC @ 10V
Input Capacitance (Ciss) @ Vds 3540pF @ 20V
Power - Max 5.7W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)