Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Rds On (Max) @ Id, Vgs 22 mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 65nC @ 8V
Input Capacitance (Ciss) @ Vds 2010pF @ 6V
Power - Max 4.2W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)