MOSFET, DUAL, NP, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.9ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:270mW; Transistor Case Style:SOT-363; No. of Pins:6; Operatin
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 290mA, 410mA
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 290mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 1.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 270mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363