Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1W
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363