Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA, 190mA
Rds On (Max) @ Id, Vgs 3 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) @ Vds 30pF @ 25V
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666