FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 420mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 8.7nC @ 10V |
Input Capacitance (Ciss) @ Vds | 200pF @ 25V |
Power - Max | 1.3W |
Mounting Type | Through Hole |
Package / Case | 4-DIP (0.300", 7.62mm) |