Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Rds On (Max) @ Id, Vgs 280 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max 40W
Mounting Type Through Hole
Package / Case TO-220-3