Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 72 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max 530mW
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead