Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A(Ta)
Rds On (Max) @ Id, Vgs 11.4 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 10V
Power - Max 18W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN