Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 9 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 1395pF @ 10V
Power - Max -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)