Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 170 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 310pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-243AA