Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Rds On (Max) @ Id, Vgs 250 mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 160pF @ 10V
Power - Max 500W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3