Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A
Rds On (Max) @ Id, Vgs 3.4 Ohm @ 4.5V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3190pF @ 15V
Power - Max 12W
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad