Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 40A
Rds On (Max) @ Id, Vgs 6 mOhm @ 20A, 8V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 10.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1870pF @ 12.5V
Power - Max 13W
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad