MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:800mW; Transistor Case Style:DSBGA; No. of Pins:6; Oper
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A
Rds On (Max) @ Id, Vgs 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 2.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 195pF @ 10V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA