MOSFET, P CH, 20V, 5A, 6SON; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.039ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:2.4W; Transistor Case Style:SON; No. of Pins:6; Operating Tem
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Rds On (Max) @ Id, Vgs 49 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 3.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 350pF @ 10V
Power - Max 2.4W
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads