Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 12.2 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1390pF @ 4V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA