Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 5.9 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 2750pF @ 30V
Power - Max 3.2W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad