Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 8.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1250pF @ 15V
Power - Max 3W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN