Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.1A
Rds On (Max) @ Id, Vgs 109 mOhm @ 500mA, 8A
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 1350pC @ 4.5V
Input Capacitance (Ciss) @ Vds 195pF @ 15V
Power - Max 500mW
Mounting Type -
Package / Case -