MOSFET, N-CH, 30V, 5A, 6SON; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:2.3W; Transistor Case Style:SON; No. of Pins:6; Operating Temperatur
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 2.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 340pF @ 15V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Buying Option 1
1
-
INR 365.39
10
-
INR 305
100
-
INR 196.42
1000
-
INR 157.38
2000
-
INR 132.98
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 365.39