MOSFET, N-CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.2W; Transistor Case Style:SON; No. of Pins:8; Operating Temper
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 35A, 8V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 36nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5240pF @ 15V
Power - Max 3.2W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad