Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs 10.3 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 5.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 700pF @ 15V
Power - Max 2.7W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad