Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 8.9nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1300pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad