Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2660pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN