MOSFET, N CH, 25V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.1W; Transistor Case Style:SON; No. of Pins:8; Operating Tempe
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4000pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad
Buying Option 1
1
-
INR 750.3
10
-
INR 689.3
100
-
INR 634.4
500
-
INR 634.4
1000
-
INR 588.65
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 750.3