MOSFET, N CH, 25V, 21A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:25V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.1W; Transistor Case Style:SON; No. of Pins:8; Operating Temperatu
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs 5 mOhm @ 20A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 9.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1365pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad