Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Rds On (Max) @ Id, Vgs 180 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 1.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 200pF @ 6V
Power - Max 500mW
Mounting Type Surface Mount
Package / Case 3-XFDFN