MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-251; No. of Pins:3; Operating Temperat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 690pF @ 100V
Power - Max 70W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA