MOSFET, N CH, 650V, 17A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No. of Pins:3; Operating Temp
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 179 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds 1950pF @ 100V
Power - Max 125W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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INR 2116.7
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Price : 2116.7