Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 26A
Rds On (Max) @ Id, Vgs 300 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.75V @ 1mA
Gate Charge (Qg) @ Vgs 660nC @ 10V
Input Capacitance (Ciss) @ Vds 1770pF @ 25V
Power - Max 450W
Mounting Type Chassis Mount
Package / Case ISOTOP