MOSFET, N CH, 30V, 80A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temper
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 5V
Input Capacitance (Ciss) @ Vds 1850pF @ 25V
Power - Max 70W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63