Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 520V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) @ Vgs 16.9nC @ 10V
Input Capacitance (Ciss) @ Vds 529pF @ 25V
Power - Max 70W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63