Transistors - Bipolar (BJT) -Single & Arrays,NPN,60A,200V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 60A
Voltage - Collector Emitter Breakdown (Max) 200V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5A, 50A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V
Power - Max 350W
Frequency - Transition 16MHz
Mounting Type Chassis Mount
Package / Case TO-204AA, TO-3