Transistors - Bipolar (BJT) -Single & Arrays,NPN,4A,400V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Vce Saturation (Max) @ Ib, Ic 800mV @ 500mA, 2.5A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 2A, 5V
Power - Max 70W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-220-3