TRANSISTOR NPN BIPOLAR SIGE
Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4V
Frequency - Transition 16GHz
Noise Figure @ f -
Gain 5.2dB
Power - Max 250mW
DC Current Gain (hFE) @ Ic, Vce 50 @ 20mA, 2V
Current - Collector (Ic) (Max) 80mA
Mounting Type Surface Mount
Package / Case Die