Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 145 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 1.8nC @ 4V
Input Capacitance (Ciss) @ Vds 115pF @ 10V
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead