FETs -Single, Arrays and Modules,200V,10A (Ta)
Specification
FET Type 4 N-Channel
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 175 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 850pF @ 10V
Power - Max 5W
Mounting Type Through Hole
Package / Case 12-SIP, Exposed Tab