Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Rds On (Max) @ Id, Vgs 23.2 mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 350µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds 1580pF @ 25V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad