Transistors - Bipolar (BJT) -Single & Arrays,NPN,10A,550V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 550V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1A, 5A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A, 4V
Power - Max 120W
Frequency - Transition 6MHz
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3