Transistors - Bipolar (BJT) -Single & Arrays,1 NPN Pre-Biased, 1 PNP,100mA, 150mA,50V
Specification
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V / 180 @ 1mA, 6V
Power - Max 150mW
Frequency - Transition 250MHz, 140MHz
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363