Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A, 4.5A
Rds On (Max) @ Id, Vgs 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 3.9nC @ 5V
Input Capacitance (Ciss) @ Vds 230pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)