MOSFET, N, 30V, 9A; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2W; Transistor Case Style:SOP; No. of Pins:8; Operating Temperature Max:150°C
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A
Rds On (Max) @ Id, Vgs 15 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 15nC @ 5V
Input Capacitance (Ciss) @ Vds 810pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
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INR 750.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 750.3